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Top Articles

#TitleJournalYearCitations
1A New High-TcOxide Superconductor without a Rare Earth ElementJapanese Journal of Applied Physics19883,444
2TiO2Photocatalysis: A Historical Overview and Future ProspectsJapanese Journal of Applied Physics20052,895
3InGaN-Based Multi-Quantum-Well-Structure Laser DiodesJapanese Journal of Applied Physics19962,326
4(Bi1/2Na1/2)TiO3-BaTiO3System for Lead-Free Piezoelectric CeramicsJapanese Journal of Applied Physics19911,993
5Dye-Sensitized Solar Cells with Conversion Efficiency of 11.1%Japanese Journal of Applied Physics20061,761
6P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)Japanese Journal of Applied Physics19891,754
7The Piezoelectricity of Poly (vinylidene Fluoride)Japanese Journal of Applied Physics19691,692
8High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well StructuresJapanese Journal of Applied Physics19951,379
9GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature PerformanceJapanese Journal of Applied Physics19961,361
10GaN Growth Using GaN Buffer LayerJapanese Journal of Applied Physics19911,203
11Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum WellsJapanese Journal of Applied Physics19971,129
12Nonohmic Properties of Zinc Oxide CeramicsJapanese Journal of Applied Physics19711,105
13Surface-Induced Parallel Alignment of Liquid Crystals by Linearly Polymerized PhotopolymersJapanese Journal of Applied Physics19921,063
14Material Design for Transparent Ferromagnets with ZnO-Based Magnetic SemiconductorsJapanese Journal of Applied Physics20001,056
15Base-Metal Electrode-Multilayer Ceramic Capacitors: Past, Present and Future PerspectivesJapanese Journal of Applied Physics2003996
16Thermal Annealing Effects on P-Type Mg-Doped GaN FilmsJapanese Journal of Applied Physics1992992
17Dielectric and Piezoelectric Properties of 0.91Pb(Zn1/3Nb2/3)O3-0.09PbTiO3Single CrystalsJapanese Journal of Applied Physics1982989
18Hole Compensation Mechanism of P-Type GaN FilmsJapanese Journal of Applied Physics1992958
19Fabrication of Gold Nanodot Array Using Anodic Porous Alumina as an Evaporation MaskJapanese Journal of Applied Physics1996945
20Electrical and Optical Properties of Stannite-Type Quaternary Semiconductor Thin FilmsJapanese Journal of Applied Physics1988919
21Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting DiodesJapanese Journal of Applied Physics1995917
22Scattering Suppression and High-Mobility Effect of Size-Quantized Electrons in Ultrafine Semiconductor Wire StructuresJapanese Journal of Applied Physics1980907
23Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase EpitaxyJapanese Journal of Applied Physics1997885
24Dielectric and Piezoelectric Properties of (Bi0.5Na0.5)TiO3–(Bi0.5K0.5)TiO3SystemsJapanese Journal of Applied Physics1999849
25Demonstration of X-Ray Talbot InterferometryJapanese Journal of Applied Physics2003812
26New High Temperature Morphotropic Phase Boundary Piezoelectrics Based on Bi(Me)O3–PbTiO3CeramicsJapanese Journal of Applied Physics2001809
27A New Process with the Promise of HighJcin Oxide SuperconductorsJapanese Journal of Applied Physics1989794
28Material science and device physics in SiC technology for high-voltage power devicesJapanese Journal of Applied Physics2015790
29Bent-Core Liquid Crystals: Their Mysterious and Attractive WorldJapanese Journal of Applied Physics2006774
30High-TcPhase Promoted and Stabilized in the Bi, Pb-Sr-Ca-Cu-O SystemJapanese Journal of Applied Physics1988765
31A Stable Quasicrystal in Al-Cu-Fe SystemJapanese Journal of Applied Physics1987760
32High-Power GaN P-N Junction Blue-Light-Emitting DiodesJapanese Journal of Applied Physics1991739
33High-quality β-Ga2O3 single crystals grown by edge-defined film-fed growthJapanese Journal of Applied Physics2016719
34Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy LayersJapanese Journal of Applied Physics1992715
35A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs HeterojunctionsJapanese Journal of Applied Physics1980708
36Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting DiodesJapanese Journal of Applied Physics1999708
37Vapor Deposition of Diamond Particles from MethaneJapanese Journal of Applied Physics1982702
38Antiferroelectric Chiral Smectic Phases Responsible for the Trislable Switching in MHPOBCJapanese Journal of Applied Physics1989697
39Mechanism of Yellow Luminescence in GaNJapanese Journal of Applied Physics1980660
40Superconductivity in the Bi-Sr-Cu-O SystemJapanese Journal of Applied Physics1987659
41Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film TransistorsJapanese Journal of Applied Physics2006659
42Grating Couplers for Coupling between Optical Fibers and Nanophotonic WaveguidesJapanese Journal of Applied Physics2006653
43Observation of Coulomb-Crystal Formation from Carbon Particles Grown in a Methane PlasmaJapanese Journal of Applied Physics1994640
44Dielectric and Structural Characteristics of Ba- and Sr-based Complex Perovskites as a Function of Tolerance FactorJapanese Journal of Applied Physics1994627
45Self-Ordering of Cell Configuration of Anodic Porous Alumina with Large-Size Pores in Phosphoric Acid SolutionJapanese Journal of Applied Physics1998624
46The Surface Free Energies of Solid Chemical Elements: Calculation from Internal Free Enthalpies of AtomizationJapanese Journal of Applied Physics1982620
47Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light EmittersJapanese Journal of Applied Physics1997620
48Blue Electroluminescent Diodes Utilizing Poly(alkylfluorene)Japanese Journal of Applied Physics1991615
49A Novel Preparation Method of Organic MicrocrystalsJapanese Journal of Applied Physics1992599
50Magnetoelectric Properties in Piezoelectric and Magnetostrictive Laminate CompositesJapanese Journal of Applied Physics2001596