# | Title | Journal | Year | Citations |
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1 | A New High-TcOxide Superconductor without a Rare Earth Element | Japanese Journal of Applied Physics | 1988 | 3,444 |
2 | TiO2Photocatalysis: A Historical Overview and Future Prospects | Japanese Journal of Applied Physics | 2005 | 2,895 |
3 | InGaN-Based Multi-Quantum-Well-Structure Laser Diodes | Japanese Journal of Applied Physics | 1996 | 2,326 |
4 | (Bi1/2Na1/2)TiO3-BaTiO3System for Lead-Free Piezoelectric Ceramics | Japanese Journal of Applied Physics | 1991 | 1,993 |
5 | Dye-Sensitized Solar Cells with Conversion Efficiency of 11.1% | Japanese Journal of Applied Physics | 2006 | 1,761 |
6 | P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI) | Japanese Journal of Applied Physics | 1989 | 1,754 |
7 | The Piezoelectricity of Poly (vinylidene Fluoride) | Japanese Journal of Applied Physics | 1969 | 1,692 |
8 | High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures | Japanese Journal of Applied Physics | 1995 | 1,379 |
9 | GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance | Japanese Journal of Applied Physics | 1996 | 1,361 |
10 | GaN Growth Using GaN Buffer Layer | Japanese Journal of Applied Physics | 1991 | 1,203 |
11 | Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells | Japanese Journal of Applied Physics | 1997 | 1,129 |
12 | Nonohmic Properties of Zinc Oxide Ceramics | Japanese Journal of Applied Physics | 1971 | 1,105 |
13 | Surface-Induced Parallel Alignment of Liquid Crystals by Linearly Polymerized Photopolymers | Japanese Journal of Applied Physics | 1992 | 1,063 |
14 | Material Design for Transparent Ferromagnets with ZnO-Based Magnetic Semiconductors | Japanese Journal of Applied Physics | 2000 | 1,056 |
15 | Base-Metal Electrode-Multilayer Ceramic Capacitors: Past, Present and Future Perspectives | Japanese Journal of Applied Physics | 2003 | 996 |
16 | Thermal Annealing Effects on P-Type Mg-Doped GaN Films | Japanese Journal of Applied Physics | 1992 | 992 |
17 | Dielectric and Piezoelectric Properties of 0.91Pb(Zn1/3Nb2/3)O3-0.09PbTiO3Single Crystals | Japanese Journal of Applied Physics | 1982 | 989 |
18 | Hole Compensation Mechanism of P-Type GaN Films | Japanese Journal of Applied Physics | 1992 | 958 |
19 | Fabrication of Gold Nanodot Array Using Anodic Porous Alumina as an Evaporation Mask | Japanese Journal of Applied Physics | 1996 | 945 |
20 | Electrical and Optical Properties of Stannite-Type Quaternary Semiconductor Thin Films | Japanese Journal of Applied Physics | 1988 | 919 |
21 | Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes | Japanese Journal of Applied Physics | 1995 | 917 |
22 | Scattering Suppression and High-Mobility Effect of Size-Quantized Electrons in Ultrafine Semiconductor Wire Structures | Japanese Journal of Applied Physics | 1980 | 907 |
23 | Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy | Japanese Journal of Applied Physics | 1997 | 885 |
24 | Dielectric and Piezoelectric Properties of (Bi0.5Na0.5)TiO3–(Bi0.5K0.5)TiO3Systems | Japanese Journal of Applied Physics | 1999 | 849 |
25 | Demonstration of X-Ray Talbot Interferometry | Japanese Journal of Applied Physics | 2003 | 812 |
26 | New High Temperature Morphotropic Phase Boundary Piezoelectrics Based on Bi(Me)O3–PbTiO3Ceramics | Japanese Journal of Applied Physics | 2001 | 809 |
27 | A New Process with the Promise of HighJcin Oxide Superconductors | Japanese Journal of Applied Physics | 1989 | 794 |
28 | Material science and device physics in SiC technology for high-voltage power devices | Japanese Journal of Applied Physics | 2015 | 790 |
29 | Bent-Core Liquid Crystals: Their Mysterious and Attractive World | Japanese Journal of Applied Physics | 2006 | 774 |
30 | High-TcPhase Promoted and Stabilized in the Bi, Pb-Sr-Ca-Cu-O System | Japanese Journal of Applied Physics | 1988 | 765 |
31 | A Stable Quasicrystal in Al-Cu-Fe System | Japanese Journal of Applied Physics | 1987 | 760 |
32 | High-Power GaN P-N Junction Blue-Light-Emitting Diodes | Japanese Journal of Applied Physics | 1991 | 739 |
33 | High-quality β-Ga2O3 single crystals grown by edge-defined film-fed growth | Japanese Journal of Applied Physics | 2016 | 719 |
34 | Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers | Japanese Journal of Applied Physics | 1992 | 715 |
35 | A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs Heterojunctions | Japanese Journal of Applied Physics | 1980 | 708 |
36 | Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes | Japanese Journal of Applied Physics | 1999 | 708 |
37 | Vapor Deposition of Diamond Particles from Methane | Japanese Journal of Applied Physics | 1982 | 702 |
38 | Antiferroelectric Chiral Smectic Phases Responsible for the Trislable Switching in MHPOBC | Japanese Journal of Applied Physics | 1989 | 697 |
39 | Mechanism of Yellow Luminescence in GaN | Japanese Journal of Applied Physics | 1980 | 660 |
40 | Superconductivity in the Bi-Sr-Cu-O System | Japanese Journal of Applied Physics | 1987 | 659 |
41 | Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film Transistors | Japanese Journal of Applied Physics | 2006 | 659 |
42 | Grating Couplers for Coupling between Optical Fibers and Nanophotonic Waveguides | Japanese Journal of Applied Physics | 2006 | 653 |
43 | Observation of Coulomb-Crystal Formation from Carbon Particles Grown in a Methane Plasma | Japanese Journal of Applied Physics | 1994 | 640 |
44 | Dielectric and Structural Characteristics of Ba- and Sr-based Complex Perovskites as a Function of Tolerance Factor | Japanese Journal of Applied Physics | 1994 | 627 |
45 | Self-Ordering of Cell Configuration of Anodic Porous Alumina with Large-Size Pores in Phosphoric Acid Solution | Japanese Journal of Applied Physics | 1998 | 624 |
46 | The Surface Free Energies of Solid Chemical Elements: Calculation from Internal Free Enthalpies of Atomization | Japanese Journal of Applied Physics | 1982 | 620 |
47 | Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters | Japanese Journal of Applied Physics | 1997 | 620 |
48 | Blue Electroluminescent Diodes Utilizing Poly(alkylfluorene) | Japanese Journal of Applied Physics | 1991 | 615 |
49 | A Novel Preparation Method of Organic Microcrystals | Japanese Journal of Applied Physics | 1992 | 599 |
50 | Magnetoelectric Properties in Piezoelectric and Magnetostrictive Laminate Composites | Japanese Journal of Applied Physics | 2001 | 596 |