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IEEE Electron Device Letters
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Top Articles
IEEE Electron Device Letters
4.8
(top 5%)
impact factor
12.5K
(top 2%)
papers
338.1K
(top 1%)
citations
176
(top 2%)
h
-index
4.9
(top 5%)
impact factor
15.4K
all documents
358.4K
doc citations
265
(top 2%)
g
-index
Top Articles
#
Title
Journal
Year
Citations
1
High-performance heat sinking for VLSI
IEEE Electron Device Letters
1981
3,773
2
Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec
IEEE Electron Device Letters
2007
1,537
3
A Graphene Field-Effect Device
IEEE Electron Device Letters
2007
929
4
30-W/mm GaN HEMTs by Field Plate Optimization
IEEE Electron Device Letters
2004
928
5
Stacked pentacene layer organic thin-film transistors with improved characteristics
IEEE Electron Device Letters
1997
883
6
Obtaining the specific contact resistance from transmission line model measurements
IEEE Electron Device Letters
1982
858
7
Power semiconductor device figure of merit for high-frequency applications
IEEE Electron Device Letters
1989
770
8
Pentacene organic thin-film transistors-molecular ordering and mobility
IEEE Electron Device Letters
1997
719
9
Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's
IEEE Electron Device Letters
1997
713
10
The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs
IEEE Electron Device Letters
2000
650
11
Double-gate silicon-on-insulator transistor with volume inversion: A new device with greatly enhanced performance
IEEE Electron Device Letters
1987
643
12
New MBE buffer used to eliminate backgating in GaAs MESFETs
IEEE Electron Device Letters
1988
627
13
High-performance fully depleted silicon nanowire (diameter /spl les/ 5 nm) gate-all-around CMOS devices
IEEE Electron Device Letters
2006
562
14
Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide
IEEE Electron Device Letters
2001
544
15
High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment
IEEE Electron Device Letters
2005
541
16
Low-subthreshold-swing tunnel transistors
IEEE Electron Device Letters
2006
533
17
Elementary scattering theory of the Si MOSFET
IEEE Electron Device Letters
1997
530
18
NROM: A novel localized trapping, 2-bit nonvolatile memory cell
IEEE Electron Device Letters
2000
524
19
Power electronics on InAlN/(In)GaN: Prospect for a record performance
IEEE Electron Device Letters
2001
516
20
An empirical model for device degradation due to hot-carrier injection
IEEE Electron Device Letters
1983
502
21
High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates
IEEE Electron Device Letters
1999
497
22
Scaling theory for cylindrical, fully-depleted, surrounding-gate MOSFET's
IEEE Electron Device Letters
1997
487
23
2O
3
MOSFETs">3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped <inline-formula> <tex-math notation="LaTeX">$\beta $ </tex-math> </inline-formula>-Ga
2
O
3
MOSFETs
IEEE Electron Device Letters
2016
468
24
75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors
IEEE Electron Device Letters
1990
465
25
A Logic Nanotechnology Featuring Strained-Silicon
IEEE Electron Device Letters
2004
462
26
Why is nonvolatile ferroelectric memory field-effect transistor still elusive?
IEEE Electron Device Letters
2002
448
27
XeCl Excimer laser annealing used in the fabrication of poly-Si TFT's
IEEE Electron Device Letters
1986
436
28
Field-Plated Ga
2
O
3
MOSFETs With a Breakdown Voltage of Over 750 V
IEEE Electron Device Letters
2016
431
29
Low temperature poly-Si thin-film transistor fabrication by metal-induced lateral crystallization
IEEE Electron Device Letters
1996
426
30
High-<tex>$kappa$</tex>/Metal–Gate Stack and Its MOSFET Characteristics
IEEE Electron Device Letters
2004
422
31
High-power AlGaN/GaN HEMTs for Ka-band applications
IEEE Electron Device Letters
2005
408
32
Large suspended inductors on silicon and their use in a 2- mu m CMOS RF amplifier
IEEE Electron Device Letters
1993
404
33
Effects of floating-gate interference on NAND flash memory cell operation
IEEE Electron Device Letters
2002
404
34
AlGaN/AlN/GaN high-power microwave HEMT
IEEE Electron Device Letters
2001
403
35
Improved Synaptic Behavior Under Identical Pulses Using AlO
<italic>x</italic>
/HfO
2
Bilayer RRAM Array for Neuromorphic Systems
IEEE Electron Device Letters
2016
391
36
High performance fully-depleted tri-gate CMOS transistors
IEEE Electron Device Letters
2003
387
37
$\hbox{MoS}_{2}$ Dual-Gate MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Top-Gate Dielectric
IEEE Electron Device Letters
2012
380
38
High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates
IEEE Electron Device Letters
2006
367
39
AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor
IEEE Electron Device Letters
2000
352
40
Epitaxial-Graphene RF Field-Effect Transistors on Si-Face 6H-SiC Substrates
IEEE Electron Device Letters
2009
341
41
$\hbox{Ga}_{2} \hbox{O}_{3}$ Schottky Barrier Diodes Fabricated by Using Single-Crystal $\beta$– $\hbox{Ga}_{2} \hbox{O}_{3}$ (010) Substrates
IEEE Electron Device Letters
2013
339
42
Electron mobility enhancement in strained-Si n-type metal-oxide-semiconductor field-effect transistors
IEEE Electron Device Letters
1994
336
43
AlGaN/GaN Recessed MIS-Gate HFET With High-Threshold-Voltage Normally-Off Operation for Power Electronics Applications
IEEE Electron Device Letters
2008
332
44
AlGaN/GaN high electron mobility transistors with InGaN back-barriers
IEEE Electron Device Letters
2006
331
45
Origin of the threshold voltage instability in SiO2/HfO2 dual layer gate dielectrics
IEEE Electron Device Letters
2003
330
46
A Continuous, Analytic Drain-Current Model for DG MOSFETs
IEEE Electron Device Letters
2004
330
47
First Demonstration of Amplification at 1 THz Using 25-nm InP High Electron Mobility Transistor Process
IEEE Electron Device Letters
2015
324
48
AlGaN/GaN HEMT With 300-GHz $f_{\max}$
IEEE Electron Device Letters
2010
319
49
Vertical high-mobility wrap-gated InAs nanowire transistor
IEEE Electron Device Letters
2006
318
50
Diamond cold cathode
IEEE Electron Device Letters
1991
316
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