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#	Title	Journal	Year	Citations
1	High-performance heat sinking for VLSI	IEEE Electron Device Letters	1981	3,773
2	Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec	IEEE Electron Device Letters	2007	1,537
3	A Graphene Field-Effect Device	IEEE Electron Device Letters	2007	929
4	30-W/mm GaN HEMTs by Field Plate Optimization	IEEE Electron Device Letters	2004	928
5	Stacked pentacene layer organic thin-film transistors with improved characteristics	IEEE Electron Device Letters	1997	883
6	Obtaining the specific contact resistance from transmission line model measurements	IEEE Electron Device Letters	1982	858
7	Power semiconductor device figure of merit for high-frequency applications	IEEE Electron Device Letters	1989	770
8	Pentacene organic thin-film transistors-molecular ordering and mobility	IEEE Electron Device Letters	1997	719
9	Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's	IEEE Electron Device Letters	1997	713
10	The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs	IEEE Electron Device Letters	2000	650
11	Double-gate silicon-on-insulator transistor with volume inversion: A new device with greatly enhanced performance	IEEE Electron Device Letters	1987	643
12	New MBE buffer used to eliminate backgating in GaAs MESFETs	IEEE Electron Device Letters	1988	627
13	High-performance fully depleted silicon nanowire (diameter /spl les/ 5 nm) gate-all-around CMOS devices	IEEE Electron Device Letters	2006	562
14	Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide	IEEE Electron Device Letters	2001	544
15	High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment	IEEE Electron Device Letters	2005	541
16	Low-subthreshold-swing tunnel transistors	IEEE Electron Device Letters	2006	533
17	Elementary scattering theory of the Si MOSFET	IEEE Electron Device Letters	1997	530
18	NROM: A novel localized trapping, 2-bit nonvolatile memory cell	IEEE Electron Device Letters	2000	524
19	Power electronics on InAlN/(In)GaN: Prospect for a record performance	IEEE Electron Device Letters	2001	516
20	An empirical model for device degradation due to hot-carrier injection	IEEE Electron Device Letters	1983	502
21	High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates	IEEE Electron Device Letters	1999	497
22	Scaling theory for cylindrical, fully-depleted, surrounding-gate MOSFET's	IEEE Electron Device Letters	1997	487
23	2O₃MOSFETs">3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped <inline-formula> <tex-math notation="LaTeX">$\beta $ </tex-math> </inline-formula>-Ga₂O₃MOSFETs	IEEE Electron Device Letters	2016	468
24	75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors	IEEE Electron Device Letters	1990	465
25	A Logic Nanotechnology Featuring Strained-Silicon	IEEE Electron Device Letters	2004	462
26	Why is nonvolatile ferroelectric memory field-effect transistor still elusive?	IEEE Electron Device Letters	2002	448
27	XeCl Excimer laser annealing used in the fabrication of poly-Si TFT's	IEEE Electron Device Letters	1986	436
28	Field-Plated Ga₂O₃MOSFETs With a Breakdown Voltage of Over 750 V	IEEE Electron Device Letters	2016	431
29	Low temperature poly-Si thin-film transistor fabrication by metal-induced lateral crystallization	IEEE Electron Device Letters	1996	426
30	High-<tex>$kappa$</tex>/Metal–Gate Stack and Its MOSFET Characteristics	IEEE Electron Device Letters	2004	422
31	High-power AlGaN/GaN HEMTs for Ka-band applications	IEEE Electron Device Letters	2005	408
32	Large suspended inductors on silicon and their use in a 2- mu m CMOS RF amplifier	IEEE Electron Device Letters	1993	404
33	Effects of floating-gate interference on NAND flash memory cell operation	IEEE Electron Device Letters	2002	404
34	AlGaN/AlN/GaN high-power microwave HEMT	IEEE Electron Device Letters	2001	403
35	Improved Synaptic Behavior Under Identical Pulses Using AlO_{<italic>x</italic>}/HfO₂Bilayer RRAM Array for Neuromorphic Systems	IEEE Electron Device Letters	2016	391
36	High performance fully-depleted tri-gate CMOS transistors	IEEE Electron Device Letters	2003	387
37	$\hbox{MoS}_{2}$ Dual-Gate MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Top-Gate Dielectric	IEEE Electron Device Letters	2012	380
38	High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates	IEEE Electron Device Letters	2006	367
39	AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor	IEEE Electron Device Letters	2000	352
40	Epitaxial-Graphene RF Field-Effect Transistors on Si-Face 6H-SiC Substrates	IEEE Electron Device Letters	2009	341
41	$\hbox{Ga}_{2} \hbox{O}_{3}$ Schottky Barrier Diodes Fabricated by Using Single-Crystal $\beta$– $\hbox{Ga}_{2} \hbox{O}_{3}$ (010) Substrates	IEEE Electron Device Letters	2013	339
42	Electron mobility enhancement in strained-Si n-type metal-oxide-semiconductor field-effect transistors	IEEE Electron Device Letters	1994	336
43	AlGaN/GaN Recessed MIS-Gate HFET With High-Threshold-Voltage Normally-Off Operation for Power Electronics Applications	IEEE Electron Device Letters	2008	332
44	AlGaN/GaN high electron mobility transistors with InGaN back-barriers	IEEE Electron Device Letters	2006	331
45	Origin of the threshold voltage instability in SiO2/HfO2 dual layer gate dielectrics	IEEE Electron Device Letters	2003	330
46	A Continuous, Analytic Drain-Current Model for DG MOSFETs	IEEE Electron Device Letters	2004	330
47	First Demonstration of Amplification at 1 THz Using 25-nm InP High Electron Mobility Transistor Process	IEEE Electron Device Letters	2015	324
48	AlGaN/GaN HEMT With 300-GHz $f_{\max}$	IEEE Electron Device Letters	2010	319
49	Vertical high-mobility wrap-gated InAs nanowire transistor	IEEE Electron Device Letters	2006	318
50	Diamond cold cathode	IEEE Electron Device Letters	1991	316

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